HAISEN INTERNATIONAL

  • image of 存储器>71V416L10BEG8
  • image of 存储器>71V416L10BEG8
71V416L10BEG8
Memory
Renesas Electronics America Inc
IC SRAM 4MBIT P
-
Tape & Reel (TR)
0
-
image of 存储器>71V416L10BEG8
image of 存储器>71V416L10BEG8
71V416L10BEG8
71V416L10BEG8
Memory
Renesas Electronics America Inc
IC SRAM 4MBIT P
-
Tape & Reel (TR)
0
-
TYPEDESCRIPTION
MfrRenesas Electronics America Inc
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Asynchronous
Memory Size4Mb (256K x 16)
Memory InterfaceParallel
Write Cycle Time - Word, Page10ns
Access Time10 ns
Voltage - Supply3V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case48-TFBGA
Supplier Device Package48-CABGA (9x9)
Base Product Number71V416
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